Lv12
40 积分 2025-09-23 加入
Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets
5小时前
已完结
Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction
5小时前
已完结
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
5天前
已完结
TiN/HZO/TiN ferroelectric capacitors with TiO2 insets: Critical difference between top and bottom interface modification
7天前
已完结
In situ study of phase transition in HZO ferroelectric thin films via TEM electron beam irradiation
11天前
已完结
Reduced Leakage and Enhanced Endurance via an ITO Oxygen Reservoir Layer in HZO Ferroelectric Capacitors
14天前
已完结
Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship
14天前
已完结
High-speed/reliability multilevel FeFET memory with atomic-layer-deposited TiO2 channel and HZO ferroelectric
14天前
已完结
Understanding and Tuning Mobile Interfaces in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films in Relation to Microstructure
14天前
已完结
ZrO2 seed layer effects on switching characteristics and low-frequency noise in HZO ferroelectric tunnel junction arrays
17天前
已完结
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