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58 积分 2025-09-23 加入
Atomic layer deposition of HZO ferroelectric films beyond the upper thickness limit via tetragonal-phase nucleation engineering
4天前
已完结
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory
1个月前
已完结
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf 0.5 Zr 0.5 O 2 devices by control of oxygen-deficient layer
1个月前
已完结
Exceptional Thickness Scalability of MFM Stack: Outstanding Performance in 3-nm TiN/3-nm HZO/3-nm TiN Capacitors
1个月前
已完结
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer
1个月前
已完结
Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects
1个月前
已完结
Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films
1个月前
已完结
Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets
1个月前
已完结
Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction
1个月前
已完结
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
1个月前
已完结
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