Lv3
270 积分 2025-07-14 加入
MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects
1个月前
已完结
GaN HEMT trap-induced variability through concurrent noise and AC TCAD modelling
1个月前
已完结
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
3个月前
已完结
Experimental evidence of impurity-induced selective short-mean-free-path phonon scatterings in β-Ga2O3
4个月前
已完结
High-mobility holes in gallium nitride and their quantum oscillations
4个月前
已完结
Recent progress in GaN-based ultraviolet photodetectors
5个月前
已完结
Self-powered asymmetric metal–semiconductor–metal AlN deep ultraviolet detector
5个月前
已完结
GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors
6个月前
已完结
Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering
7个月前
已完结
Visible-to-THz near-field nanoscopy
8个月前
已完结
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