Lv3
260 积分 2025-07-14 加入
Experimental evidence of impurity-induced selective short-mean-free-path phonon scatterings in β-Ga2O3
27天前
已完结
High-mobility holes in gallium nitride and their quantum oscillations
1个月前
已完结
Recent progress in GaN-based ultraviolet photodetectors
1个月前
已完结
Self-powered asymmetric metal–semiconductor–metal AlN deep ultraviolet detector
2个月前
已完结
GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors
3个月前
已完结
Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering
4个月前
已完结
Visible-to-THz near-field nanoscopy
5个月前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
10个月前
已完结
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