Lv1
10 积分 2025-11-18 加入
Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2
25天前
已完结
Enhanced Dielectric Constant by Al Gradient Doping on Atomic‐Layer‐Deposited HfO2‐Based Metal–Insulator–Metal Capacitor
2个月前
已完结
Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor
2个月前
已完结
Dopant Engineering of Hafnia‐Based Ferroelectrics for Long Data Retention and High Thermal Stability
2个月前
已完结
Capacitance Boosting of Antiferroelectric‐Hf0.2Zr0.8O2/Al2O3 Blocking Layer Using Y2O3 Interfacial Layer for Charge Trap Flash Memory
2个月前
已完结
Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications
2个月前
已完结
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
2个月前
已完结
Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory
2个月前
已完结
Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films
2个月前
已完结
Sub-5 nm Al-doped HfO2 ferroelectric thin films compatible with 3D NAND process
2个月前
已关闭