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Enhanced Dielectric Constant by Al Gradient Doping on Atomic‐Layer‐Deposited HfO2‐Based Metal–Insulator–Metal Capacitor
18天前
已完结
Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor
18天前
已完结
Dopant Engineering of Hafnia‐Based Ferroelectrics for Long Data Retention and High Thermal Stability
18天前
已完结
Capacitance Boosting of Antiferroelectric‐Hf0.2Zr0.8O2/Al2O3 Blocking Layer Using Y2O3 Interfacial Layer for Charge Trap Flash Memory
18天前
已完结
Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications
25天前
已完结
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
25天前
已完结
Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory
25天前
已完结
Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films
1个月前
已完结
Sub-5 nm Al-doped HfO2 ferroelectric thin films compatible with 3D NAND process
1个月前
已关闭
Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition
1个月前
已完结
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