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10 积分 2025-09-18 加入
Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide
1个月前
已完结
Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide
6个月前
已完结
Femtosecond Laser Controllable Annealing for Color Centers based on Ion-implanted Silicon Carbide Substrate
6个月前
已完结
Preparation and transformation of color centers in 4H-SiC by electron irradiation and subsequent annealing
7个月前
已完结
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