Lv11
10 积分 2025-09-09 加入
Impact of heavy ion energy and species on single-event upset in commercial floating gate cells
1小时前
待确认
A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
1小时前
待确认
Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics
1小时前
待确认
High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
1小时前
已完结
4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars
20天前
已完结
A 4.3−mΩcm2, 1100‐V normally‐off IEMOSFET on SiC
24天前
已完结
high performance sic iemosfet/sbd module
25天前
已关闭
Transient turn-on characteristics of Si RBDT and SiC MOSFET under nanosecond current pulse range
1个月前
已完结
Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti-parallel Schottky barrier diodes
1个月前
已完结
A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics
1个月前
已完结