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82 积分 2025-01-19 加入
GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices
2天前
已完结
Theoretical Insight into the Band Alignment at High-κ Oxide XO2/Diamond (X = Hf and Zr) Interfaces with a SiO2 Interlayer for MOS Devices
1个月前
已完结
Mobility in Semiconducting Carbon Nanotubes at Finite Carrier Density
1个月前
已完结
Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures
1个月前
已完结
Band alignment and charge transfer mechanisms in the prediction of advanced gate dielectrics for carbon nanotube field-effect transistors
1个月前
已完结
Layer-dependent bandgap and electrical engineering of molybdenum disulfide
2个月前
已完结
Quantization, gate dielectric and channel length effect in double-gate tunnel field-effect transistor
2个月前
已关闭
Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors
2个月前
已完结
Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors
2个月前
已关闭
Bonding characteristics and electronic structures of the contact interfaces between group 13 metals and carbon nanotubes
2个月前
已完结
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