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110 积分 2025-01-09 加入
Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures
13小时前
已完结
Characteristics of SiC MOSFET in a Wide Temperature Range
13小时前
已完结
Temperature-Sensitive Electrical Parameters of SiC MOSFET Power Module and its Application in Junction Temperature Evaluation
14小时前
已完结
Third Quadrant Conduction Loss of 1.2–10 kV SiC MOSFETs: Impact of Gate Bias Control
9天前
已完结
Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs
9天前
已完结
Total-Ionizing-Dose and Displacement Damage Effects in Trench SiC Power MOSFETs
9天前
已完结
A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies
9天前
已完结
Avalanche Ruggedness Evaluation on Planar and Trench SiC MOSFETs: An Experimental and TCAD Simulation Study
9天前
已完结
Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs
9天前
已完结
Comparison of a 3.3 kV SiC Hybrid-Channel Trench MOSFET and a Planar MOSFET
9天前
已完结
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