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10 积分 2023-04-01 加入
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
2个月前
已完结
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone
2个月前
已完结
Suppression of Iron Memory Effect in GaN Epitaxial Layers
2个月前
已完结
Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs
2个月前
已完结
Novel staggered quantum well design and in-surfactant GaN buffer layer in UVA light emitting diode heterostructures
2个月前
已完结
Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells
3个月前
已完结
Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes
3个月前
已完结
Luminescence properties of defects in GaN
3个月前
已完结
Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells
3个月前
已完结
Residual Al Adatoms Driven Epitaxy of AlGaN QWs for High‐Performance UV LEDs
3个月前
已完结
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