Lv11
30 积分 2025-03-27 加入
300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology
6小时前
待确认
A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode
28天前
已完结
Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage
1个月前
已完结
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region
1个月前
已完结
Improved single-event hardness of trench power MOSFET with a widened split gate
1个月前
已完结
A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings
1个月前
已完结
Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions
1个月前
已完结
A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage
1个月前
已完结
A low gate charge field-plate trench MOSFET with hollow split gate structure
1个月前
已完结
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