标题 |
专利、报告等 Novel hafnium-based compound metal oxide gate dielectrics for advanced CMOS technology
用于先进CMOS技术的新型铪基复合金属氧化物栅介质
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Li, M. F., Zhu, C., Wang, X. P., & Yu, X. (2007). Novel hafnium-based compound metal oxide gate dielectrics for advanced CMOS technology. In Proc. Keynote Speech Japan 12th Workshop Gate Stack Technol. Physics, Jpn. Soc. Appl. Phys. (pp. 1-6). |
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