| 标题 |
Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension 具有混合P-NiO结终端延伸的垂直GaN肖特基势垒二极管
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| 其它 |
期刊:IEEE Journal of the Electron Devices Society 作者:Shaocheng Li; Shu Yang; Zhao Han; Weibing Hao; Kuang Sheng; et al 出版日期:2024 |
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