JFET公司
拓扑(电路)
断路器
电压
计算机科学
碳化硅
电气工程
断层(地质)
可控性
网络拓扑
电子工程
晶体管
材料科学
工程类
场效应晶体管
数学
计算机网络
冶金
地震学
地质学
应用数学
作者
Wei Wang,Zhikang Shuai,Hongliang Duan,Z. John Shen
出处
期刊:IEEE Transactions on Industrial Electronics
[Institute of Electrical and Electronics Engineers]
日期:2023-11-01
卷期号:70 (11): 11121-11131
标识
DOI:10.1109/tie.2022.3229339
摘要
Solid-state circuit breaker (SSCB) has the advantages of fast response, strong controllability, and no arc cutting in dc fault clearance, but it also has the problem of cascaded voltage unbalance in the medium voltage direct current distribution networks. First, this article proposes a single-drive topology of silicon carbide junction field-effect transistor super cascade module (SiC-JFET-SCM). Then, the turn- off process of the SiC-JFET-SCM is analyzed in detail by establishing the mathematical models. It is found that the resistance-capacitance circuits ( RC ) networks can affect the action process of SiC-JFET-SCM, leading to the difference in off -time between traditional analysis and actual work. Finally, based on that, the critical parameters are calculated to provide a theoretical basis for the device selection. A 3.3 kV/63A SSCB based on SiC-JFET-SCM is designed, which can identify faults precisely, and achieve a better dynamic and static voltage balance. Experimental results verify the effectiveness of the designed SSCB under different fault conditions.
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