互调
容性耦合等离子体
非线性系统
联轴节(管道)
等离子体
对偶(语法数字)
功率(物理)
材料科学
物理
原子物理学
光电子学
量子力学
感应耦合等离子体
文学类
艺术
冶金
放大器
CMOS芯片
作者
Zili Chen,Dehen Cao,Shimin Yu,Yu Wang,Zhipeng Chen,Wei Jiang,Julian Schulze,Ya Zhang
标识
DOI:10.1088/1361-6595/adf006
摘要
Abstract Intermodulation of the current, voltage and dissipated power, resulting from the interaction between driving sources and the nonlinear plasma load, is a common phenomenon in dual-frequency capacitively coupled plasmas (DFCCPs). This phenomenon affects the sheath kinetics and significantly impacts power matching for specific discharge conditions. In this study, we investigate the intermodulation phenomenon in DFCCP discharges using a two-dimensional axisymmetric implicit electrostatic particle-in-cell/Monte Carlo collision (PIC/MCC) model that contains an external matching circuit. Simulation results demonstrate that the presence of intermodulation distortions and high-frequency oscillations, excited by the plasma series resonance (PSR) effect, lead to the generation of a complex frequency spectrum. This spectrum includes DC, fundamental and harmonic components at low and high frequencies, as well as their sum and difference frequencies. Additionally, the simulation reveals that the low-frequency (LF) bias voltage influences the plasma impedance characteristics by modulating the sheath width, thereby altering the power transfer efficiency of the high-frequency source. At higher LF voltages, the plasma impedance exhibits significant cyclic variations, preventing effective power matching solely through matching network parameter optimization under constant voltage or constant power conditions. These findings enhance the understanding of the interactions between the plasma and external circuits and provide valuable insights for impedance-matching design in industrial applications.
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