辐射损伤
晶体管
材料科学
光电子学
离域电子
辐射
辐射硬化
半导体器件
场效应晶体管
辐照
数码产品
电子束感应电流
梁(结构)
纳米技术
光学
化学
物理
硅
电压
有机化学
物理化学
图层(电子)
量子力学
核物理学
作者
David S. Ashby,Diana R. Garland,Madeline G. Esposito,György Vizkelethy,Matthew Marinella,Michael Lee McLain,Juan Pablo Llinas,A. Alec Talin
摘要
The rapidly increasing use of electronics in high-radiation environments and the continued evolution in transistor architectures and materials demand improved methods to characterize the potential damaging effects of radiation on device performance. Here, electron-beam-induced current is used to map hot-carrier transport in model metal-oxide semiconductor field-effect transistors irradiated with a 300 KeV focused He+ beam as a localized line spanning across the gate and bulk Si. By correlating the damage to the electronic properties and combining these results with simulations, the contribution of spatially localized radiation damage on the device characteristics is obtained. This identified damage, caused by the He+ beam, is attributed to localized interfacial Pb centers and delocalized positive fixed-charges, as surmised from simulations. Comprehension of the long-term interaction and mobility of radiation-induced damage are key for future design of rad-hard devices.
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