Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures

This Letter reports on the mechanisms of reverse leakage current transport in InAlN/GaN heterostructure Schottky diodes with intentionally oxidized iridium oxide (IrOx) contacts across a wide temperature range. Current–voltage characteristics were experimentally measured from 25 to 500 °C (≈ 300 to 773 K). Three distinct regions in the reverse bias regime of operation and their corresponding dominant current transport mechanisms are identified. A trap-assisted tunneling mechanism is observed at low reverse bias, and trap energy levels are between 1.12 and 1.99 eV. At medium reverse bias, Poole–Frenkel emission is decomposed into low-field, mid-field, and high-field regions and the related trap activation energies vary from 0.38 to 2.04 eV. At high reverse bias, the Fowler–Nordheim model is applied and the effective barrier height to tunneling is 0.78 eV. The model of the reverse leakage current constructed using the parameters associated with these transport mechanisms closely aligns with the experimental data and supports the advancement of high-temperature electronics based on IrOx -gated InAlN/GaN heterostructure technology.