Integration of plasma dicing in the collective die to wafer hybrid bonding process

In this paper, the integration of plasma dicing within the collective die to wafer hybrid bonding process flow will be discussed. A layer to protect Cu pads on the die bonding interface has been explored. The resulting dies were bonded to the target wafer and were measured electrically on Kelvin and daisy chains structure on pitch ranging from 5 to 20 μm.