石墨烯
双层石墨烯
单层
接触电阻
材料科学
双层
凝聚态物理
空位缺陷
密度泛函理论
纳米技术
锡
光电子学
物理
量子力学
化学
膜
图层(电子)
生物化学
冶金
作者
Adil Meersha,Jeevesh Kumar,Abhishek Mishra,Harsha B. Variar,Mayank Shrivastava
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2023-04-01
卷期号:44 (4): 666-669
标识
DOI:10.1109/led.2023.3250329
摘要
Contact engineering of monolayer graphene channel FETs has been a fundamental limiting factor hindering its intrinsic benefits for applications such as THz electronics, quantum sensing, quantum computing/communication devices, etc. This experimental work presents a unique technique to achieve record low contact resistance using carbon vacancy-assisted bilayer graphene contact. The bilayer graphene contact with engineered carbon vacancies lowered the metal-graphene interfacial distance and enhanced the atomic orbital overlap, eventually lowering the contact resistance. The interfacial properties and orbital interactions are investigated using density functional theory and non equilibrium Green’s function based transport computations. The reduction in contact resistance is then experimentally validated using unique Kelvin probe structures with monolayer and bilayer contacts. The captured contact resistance is as low as $\sim 36~\Omega $ . $\mu \text{m}$ , which is a record low contact resistance value reported to date.
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