射频开关
插入损耗
电容
材料科学
光电子学
无线电频率
太赫兹辐射
基质(水族馆)
相(物质)
电气工程
硫系化合物
电容器
电压
物理
电极
工程类
量子力学
海洋学
地质学
作者
Nabil El-Hinnawy,Pavel Borodulin,E. B. Gareth Jones,B. Wagner,Matthew R. King,J. Mason,J.A. Bain,Jeyanandh Paramesh,T. E. Schlesinger,Robert S. Howell,Michael J. Lee,Robert M. Young
标识
DOI:10.1109/csics.2014.6978522
摘要
Improvements to the GeTe inline phase-change switch (IPCS) technology have resulted in a record-performing radio-frequency (RF) switch. An ON-state resistance of 0.9 Ω (0.027 Ω·mm) with an OFF-state capacitance and resistance of 14.1 fF and 30 kΩ, respectively, were measured, resulting in a calculated switch cutoff frequency (F co ) of 12.5 THz. This represents the highest reported Fco achieved with chalcogenide switches to date. The threshold voltage (V th ) for these devices was measured at 3V and the measured third-order intercept point (TOI) was 72 dBm. Single-pole, single-throw (SPST) switches were fabricated, with a measured insertion loss less than 0.15 dB in the ON-state, and 15dB isolation in the OFF-state at 18 GHz. Single-pole, double-throw (SPDT) switches were fabricated using a complete backside process with through-substrate vias, with a measured insertion loss 0.25 dB, and 35dB isolation.
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