Investigations by SIMS of the bulk impurity diffusion of Ge in Si

Abstract The diffusion of germanium as a lattice impurity in silicon has been studied for 38 specimens, annealed at temperatures between 1149 and 1661 K. A total of 89 concentration profiles were evaluated by means of secondary-ion mass spectrometry. The diffusion coefficients were found to range between 2·0×l0−19 and 7·7 × 10−12 cm2s−1. The Arrhenius parameters are Do = 1·03 × 105cm2 s−1 and Q = 514·5kJmol−1. The results contradict the view suggested by Seeger and Chik (1968), that a transition takes place from an interstitial mechanism at high temperatures to a vacancy mechanism at low temperatures.