光电流
响应度
量子效率
光电二极管
光电子学
材料科学
半最大全宽
暗电流
极化(电化学)
光电效应
光学
物理
光电探测器
化学
物理化学
作者
Qianyu Hou,Haifan You,Qing Cai,Hui Guo,Pengfei Shao,Danfeng Pan,Le Yu,Dunjun Chen,Hai Lu,Rong Zhang,Youdou Zheng
出处
期刊:IEEE Photonics Journal
日期:2021-06-01
卷期号:13 (3): 1-8
被引量:4
标识
DOI:10.1109/jphot.2021.3086855
摘要
We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same direction with the applied bias field was introduced to the absorption layer by adjusting the Al composition ratio between the p-type AlGaN layer and i-type AlGaN absorption layer. The polarization enhanced narrow-band PD exhibited a higher external quantum efficiency (EQE) of 82% than the conventional one with an EQE of 67%. Meanwhile, a low dark current density of 1.7 nA/cm 2 and four orders of magnitude UV-visible rejection ratio were achieved for the enhanced narrow-band PDs with a maximum photocurrent responsivity of 202 mA/W at 304 nm.
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