兴奋剂
隧道枢纽
材料科学
光电子学
量子隧道
太阳能电池
激光器
硅
光电效应
二极管
单色
外延
光学
纳米技术
物理
图层(电子)
作者
Chaoliang Guan,Yuzhen Deng,Xiaomei Chen
标识
DOI:10.1109/ogc.2019.8925082
摘要
Heavy doping of epitaxial tunnel junction layers is of interest in vertical hetero-structure laser photovoltaic cell in recent years. In this paper, the performance characteristic of AlGaAs/GaAs tunnel junctions with silicon(Si) and tellurium (Te) doped were presented, respectively. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance and better performance. A comparative study using both Si and Te doping in the AlGaAs/GaAs tunnel junction of six junctions monochromatic laser photovoltaic cells also showed a higher photoelectric efficiency for Te doping. Therefore, the tunnel junction with Te doping can be considered to improve the performance of monochromatic laser cells.
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