记忆电阻器
瓶颈
人工神经网络
计算机科学
云计算
过程(计算)
横杆开关
服务器
电阻随机存取存储器
神经形态工程学
材料科学
电气工程
嵌入式系统
电子工程
计算机网络
人工智能
工程类
电信
电压
操作系统
作者
Seok Cheol Choi,Yong Yook Kim,Tien Van Nguyen,Won Hee Jeong,Kyeong‐Sik Min,Byung Joon Choi
标识
DOI:10.1002/aelm.202100050
摘要
Abstract Frequent data transfers between Internet‐of‐Things (IoT) sensors and cloud servers consume energy and lead to latency—a bottleneck for ubiquitous computing. To reduce the need for such enormous data transfers, the combined function of IoT sensors and near‐sensor artificial neural networks can process data properly before they are transferred to cloud servers. Herein, energy‐efficient memristor crossbar arrays are demonstrated for image recognition tasks that are potentially adopted for IoT sensors. The adoption of the selector‐free memristor device with a self‐rectifying function allows for simple stacking of metal–dielectric–metal layer, thus significantly simplifying the fabrication process while achieving low‐current operation (<10 µA in microdevice). Area‐dependent resistive switching characteristics and the incorporation of interface effects reveal the role of the switching and rectifying phenomena in such devices. Finally, the Modified National Institute of Standards and Technology pattern recognition task is demonstrated with 32 × 32 memristor crossbar arrays combining a SPICE simulation. Therefore, it is expected that self‐rectifying memristor arrays can pave the way for the development of more intelligent IoT sensors.
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