光电子学
材料科学
异质结
氧化铟锡
光电导性
量子点
激子
光电探测器
钙钛矿(结构)
纳米材料
纳米晶
纳米-
铟
纳米技术
薄膜
化学
物理
结晶学
复合材料
量子力学
作者
Qiqian He,Gaoyu Chen,Yongkai Wang,Xiaoyu Liu,Danting Xu,Xiangxing Xu,Ying Liu,Jianchun Bao,Xun Wang
出处
期刊:Small
[Wiley]
日期:2021-06-09
卷期号:17 (28): 2101403-2101403
被引量:12
标识
DOI:10.1002/smll.202101403
摘要
All-Inorganic perovskite CsPbX3 (X = Cl, Br, I) quantum dots (QDs) have attracted tremendous attention in the past few years for their appealing performance in optoelectronic applications. Major properties of CsPbX3 QDs include the positive photoconductivity (PPC) and the defect tolerance of the in-band trap states. Here it is reported that when hybridizing CsPbX3 QDs with indium tin oxide (ITO) nanocrystals to form CsPbX3-ITO nano-heterojunctions (NHJs), a voltage tuned photoresponse—from PPC to negative photoconductivity (NPC) transform—is achieved in lateral drain-source structured ITO/CsPbX3-ITO-NHJs/ITO devices. A model combining exciton, charge separation, transport, and most critical the voltage driven electron filling of the in-band trap states with drain–source voltage (VDS) above a threshold, is proposed to understand this unusual PPC-NPC transform mechanism, which is different from that of any known nanomaterial system. This finding exhibits potentials for developing devices such as photodetectors, optoelectronic switches, and memories.
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