氢氟酸
溶解
缓冲氧化物腐蚀
氧化物
氟化铵
蚀刻(微加工)
硅
化学
氟化物
活化能
无机化学
腐蚀坑密度
氟化氢
铵
分析化学(期刊)
物理化学
反应离子刻蚀
有机化学
图层(电子)
作者
H. Proksche,G. Nagorsen,Dieter Röss
出处
期刊:Journal of The Electrochemical Society
[The Electrochemical Society]
日期:1992-02-01
卷期号:139 (2): 521-524
被引量:37
摘要
The dependence of etch rates of thermal oxide and undoped vapor‐deposited silicon dioxides as a function of the composition of buffered was examined. The composition of the buffered oxide etch (BOE) was varied from 0–30 weight percent (w/o) ammonium fluoride with 2–15 w/o hydrofluoric acid . The etch rates of the silicon dioxides run through a maximum. The position of the maximum increases linearly to higher concentrations with higher content. For the reaction of dissolution, two different paths are discussed. In BOE with concentration lower than 15 w/o silicon dioxides react mainly with . With higher ammonium fluoride concentration the reaction with becomes increasingly dominant. In BOE with 6 w/o , the activation energy for the reaction of dissolution was determined. Diagrams of etch rates as a function of and concentration are presented.
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