材料科学
结晶度
薄膜
非阻塞I/O
溅射
射频功率放大器
溅射沉积
基质(水族馆)
衍射
分析化学(期刊)
无线电频率
带隙
光电子学
光学
纳米技术
化学
复合材料
电气工程
物理
色谱法
CMOS芯片
放大器
催化作用
工程类
地质学
海洋学
生物化学
作者
Anas A. Ahmed,M.R. Hashim,Marzaini Rashid
出处
期刊:Nucleation and Atmospheric Aerosols
日期:2019-01-01
被引量:3
摘要
Nickel oxide (NiO) thin films were deposited on Si substrate by using RF magnetron sputtering at 100 °C. The RF power was varied as 150, 200, 250 and 300 W. The effect of varying RF power on structural, morphological and optical properties of the films was investigated using X-ray diffraction (XRD), field emission electron microscopy (FESEM) and UV-vis reflectance spectroscopy, respectively. XRD analysis showed that NiO films exhibited cubic structure with preferred orientation along (200) plane for films prepared at 150, 200 and 250 W. The preferred orientation was changed from (200) to (111) when the RF power was increased from 250 to 300 W. The crystallinity of the films was improved with increasing the RF power from 150 to 200 W, however, it was deteriorated at higher sputtering power. The optical band gap of the films was increased from 3.57 to 3.6 eV as the RF power was increased from 150 to 200 W, however, it was reduced to 3.50 eV followed by an increase to 3.54 eV with further increase of the RF power to 250 and 300 W, respectively.
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