Evolution of Electrical Transmission Characteristics in TSV and TGV Interconnect Structures Under Thermal Loading

材料科学 通过硅通孔 互连 热冲击 热膨胀 光电子学 热的 传输(电信) 复合材料 分层(地质) 电子工程 电阻抗 电气工程 可靠性(半导体) 炸薯条 压力(语言学) 热阻 休克(循环) 三维集成电路 电力传输 堆栈(抽象数据类型) 透射系数 泄漏(经济) 结构工程
作者
Yangyang Zhou,Xiangxiang Zhong,He Diao,Bingxu Ma,Fengzhi Tang,Xing Fu,Ping Lai,Haozhong Wang,Jiahao Liu,Xiaoting Chen,Guoguang Lu,Hongtao Chen,Xiaofeng Yang
出处
期刊:IEEE Transactions on Device and Materials Reliability [Institute of Electrical and Electronics Engineers]
卷期号:25 (4): 966-976
标识
DOI:10.1109/tdmr.2025.3628387
摘要

Through silicon via (TSV) and through glass via (TGV) are critical for advanced chip packaging, enabling vertical interconnections and improving bandwidth. The increase in chip density leads to a dramatic rise in heat generation, which induces the significant coefficient of thermal expansion (CTE) mismatch in TSV and TGV and further induces internal stresses, potentially degrading electrical performance and reliability. This work presented a study of TSV and TGV interconnect structures, focusing on their electrical transmission characteristics under thermal loading, evaluating the reliability differences between TGV and TSV by using electrical transmission characteristics as the metric. The findings reveal that the electrical transmission characteristics of TGV generally outperform those of TSV. Especially, when optimized by increasing signal via spacing and adding additional grounding vias, the characteristics of TGV significantly enhance high-frequency performance. Furthermore, thermal shock measurements indicate that TSV experience rapid transmission characteristics degradation at lower shock cycles, while TGV degrade more slowly even at higher cycles. Based on microstructural analysis, we observe that TSV suffers from cracked insulation layers, leading to current leakage and transmission performance loss; TGV exhibits only minor delamination issues between the RDL and PI that do not significantly impact transmission characteristics. Under high temperature, TSV initially shows improved transmission performance due to air gap formation, but later degrade sharply as copper extrudes and bridges with the silicon substrate. In contrast, under high temperature, TGV exhibit a gradual increase in impedance due to crack expansion within the copper, but this effect remains minimal. TGV not only offers superior transmission performance but also demonstrates greater reliability under thermal loading compared to TSV.
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