高电子迁移率晶体管
氮化镓
材料科学
热导率
声子
晶体管
光电子学
有限元法
蒙特卡罗方法
热的
宽禁带半导体
结温
弹道传导
电子工程
凝聚态物理
电子
物理
电气工程
纳米技术
工程类
热力学
复合材料
电压
图层(电子)
数学
量子力学
统计
作者
Shiyi Yang,Xuesong Chen,Hua Younan,Han-Ling Li,Lan Wei,Bing‐Yang Cao
标识
DOI:10.1109/ted.2022.3227894
摘要
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is studied by combining the technology computer-aided design (TCAD) and phonon Monte Carlo (MC) simulations. The simulation results indicate that the bias-dependent heat generation in the channel can have a remarkable impact on the thermal spreading process and the phonon ballistic effects simultaneously. Based on the two-heat-source model, we propose a two-thermal-conductivity model to predict the device junction temperature with the consideration of bias-dependent phonon transport in the HEMT. The proposed model is easy to be coupled with the finite-element method (FEM)-based thermal analysis without the need for time-consuming multiscale electrothermal simulations.
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