Natural van der Waals Canalization Lens for Non‐Destructive Nanoelectronic Circuit Imaging and Inspection

Abstract Optical inspection has long served as a cornerstone non‐destructive method in semiconductor wafer manufacturing, particularly for surface and defect analysis. However, conventional techniques such as dark‐field scattering optics or atomic force microscopy (AFM) face significant limitations, including insufficient resolution or the inability to resolve subsurface features. Here, an approach is proposed that integrates the strengths of dark‐field scattering optics and AFM by leveraging a van der Waals (vdW) canalization lens based on natural biaxial α‐MoO 3 crystals. This method enables ultrahigh‐resolution subwavelength imaging with the ability to visualize both surface and buried structures, achieving a spatial resolution of 15 nm and grating pitch detection down to 100 nm. The underlying mechanism relies on the unique anisotropic properties of α‐MoO 3 , where its atomic‐scale unit cells and biaxial symmetry facilitate the diffraction‐free propagation of both evanescent and propagating waves via a flat‐band canalization regime. Unlike metamaterial‐based superlenses and hyperlenses, which suffer from high plasmonic losses, fabrication imperfections, and uniaxial constraints, α‐MoO 3 provides robust and super‐resolution imaging in multiple directions. The approach is successfully applied to achieve high‐resolution inspection of buried nanoscale electronic circuits, offering unprecedented capabilities essential for next‐generation semiconductor manufacturing.