Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC∕SiO2 interfaces in oxidized porous SiC

The effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC∕SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400°C and depassivation for temperatures above 850°C. A dissociation energy of (4.3±0.3)eV has been determined for both polytypes.