化学
带隙
电子能带结构
电子结构
晶体结构
相(物质)
凝聚态物理
不稳定性
紧密结合
直接和间接带隙
结晶学
电子波段
计算化学
物理
有机化学
机械
作者
Dong‐Kyun Seo,Nithin Gupta,Myung‐Hwan Whangbo,Harald Hillebrecht,G. Thiele
摘要
Tight-binding electronic band structures of cesium trihalometalates CsGeX3 (X = Cl, Br) were calculated to examine the pressure-dependence of their crystal structures and band gaps as well as their primitive cubic to rhombohedral structural phase transitions. In agreement with experiment, our calculations show that an increase in the applied pressure decreases the band gap and the stability of CsGeX3, and the band gap is larger for CsGeCl3 than for CsGeBr3. CsGeCl3 has a much stronger second-order Jahn−Teller instability than does CsGeBr3 and therefore can adopt a disordered cubic phase unlike CsGeBr3.
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