锌黄锡矿
捷克先令
材料科学
光伏系统
太阳能电池
光电子学
能量转换效率
图层(电子)
短路
带隙
开路电压
薄膜
半导体
电压
复合材料
纳米技术
电气工程
工程类
作者
Yousaf Hameed Khattak,Faisal Baig,Shafi Ullah,B. Marı́,Saira Beg,Hanif Ullah
摘要
C u 2 ZnSn S 4 ( CZTS ) is a non-toxic earth abundant material and a promising quaternary semiconductor compound of groups I−II−IV−VI having a kesterite symmetrical structure. Due to its optimum direct bandgap, it has been considered as a suitable material for absorber layers for photovoltaic cell applications. This paper presents the numerical simulation and modeling of CZTS based thin film kesterite photovoltaic cells using SCAP-1D software. The influence of device parameters such as the carrier concentration, thickness, densities of absorber, buffer and window layers, defect densities and the temperature effect on the performance of the ZnO/CdS/CZTS/Mo photovoltaic cell structure are analyzed. Defect densities are added to the absorber layer and the interface between the buffer layer and the absorber layer. This type of solar cell does not comprise any toxic material and can lead to non-toxic thin film photovoltaic cells with outstanding optical properties. In this work, promising optimized results had been achieved with a conversion efficiency of 23.72%, a fill factor of 82.54%, a short-circuit current (Jsc) of 44.87 mA/cm2, and an open circuit voltage (Voc) of 0.64V.
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