材料科学
空隙(复合材料)
悬空债券
正电子湮没谱学
等离子体增强化学气相沉积
退火(玻璃)
晶片键合
薄脆饼
电介质
硅
化学气相沉积
化学键
扫描电子显微镜
电子顺磁共振
复合材料
正电子
光电子学
电子
核磁共振
正电子湮没
化学
物理
有机化学
量子力学
作者
Fuya Nagano,Fumihiro Inoue,Alain Phommahaxay,Lan Peng,Francois Chancerel,Hasan Naser,Akira Uedono,Gerald Beyer,Eric Beyne,Stefan De Gendt,Serena Iacovo
标识
DOI:10.1149/2162-8777/acbe18
摘要
To obtain reliable 3D stacking, a void-free bonding interface should be obtained during wafer-to-wafer direct bonding. Historically, SiO 2 is the most studied dielectric layer for direct bonding applications, and it is reported to form voids at the interface. Recently, SiCN has raised as a new candidate for bonding layer. Further understanding of the mechanism behind void formation at the interface would allow to avoid bonding voids on different dielectrics. In this study, the void formation at the bonding interface was studied for a wafer pair of SiO 2 and SiCN deposited by plasma enhanced chemical vapor deposition (PECVD). The presence of voids for SiO 2 was confirmed after the post-bond anneal (PBA) at 350 °C by Scanning Acoustic Microscopy. Alternatively, SiCN deposited by PECVD has demonstrated a void-free interface after post bond annealing. To better understand the mechanism of void formation at the SiO 2 bonding interface, we used Positron Annihilation Spectroscopy (PAS) to inspect the atomic-level open spaces and Electron Spin Resonance (ESR) to evaluate the dangling bond formation by N 2 plasma activation. By correlating these results with previous results, a model for void formation mechanism at the SiO 2 and the absence of for SiCN bonding interface is proposed.
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