Improving the electrical stability of a‐IGZO TFT through gate surround structures

Abstract This paper delves into a structural modification of dual‐gate oxide thin film transistor (TFT). Diverging from the conventional dual‐gate TFT structure, the authors’ approach connects the bottom and top gate electrodes, effectively enveloping all four sides of the a‐IGZO channel. This shielding configuration ensures stable operation, even under light illumination. Moreover, capitalizing on the stability under light conditions, the authors observed a remarkable threefold improvement in the mobility of the fabricated TFT with this proposed structure, resulting in a substantial 156% increase in current. Furthermore, in the negative bias illumination stress test, the proposed TFT exhibited minimal fluctuations when compared to its single‐gate counterpart, further underscoring its exceptional and robust performance.