期刊:CrystEngComm [Royal Society of Chemistry] 日期:2025-01-01
标识
DOI:10.1039/d5ce00404g
摘要
GaN based indium (In) doped TiO2 nanorods heterojunctions (GaN/In-TiO2) are heteroepitaxically grown on C-plane sapphires by organic metal chemical vapor deposition (MOCVD). Compared with GaN based undoped TiO2 nanorods heterojunctions...