Visible-blind bipolar response photodetector based on GaN/ZnO:Ga/GaAs double heterojunctions for dual-band optoelectronic logic operation

Bipolar response photodetectors have sparked considerable interest in optical switches, smart chips, and artificial neuroscience, but invisible ones are still scarce. Here, a visible-blind bipolar response photodetector based on GaN/ZnO:Ga/GaAs double heterojunctions is proposed. Under self-powered conditions, the designed photodetector only shows dual-band photoresponse in the ultraviolet (UV) and infrared (IR) spectrum. Specifically, originating from the absorption characteristics and suitable energy band of multilayered structures, it exhibits positive (negative) photocurrents under UV (IR) illumination. The maximum responsivity of 4.7 mA/W (−1.8 mA/W) under the UV (IR) illumination and fast response time (19.6/36.8 μ s) are achieved. Dual-band optoelectronic logic operations, including OR, AND, NOR, NOT, and NAND, are realized with a single photodetector by precisely regulating the UV and IR illumination. This work paves an approach for the development of visible-blind bipolar photodetection and all-in-one optoelectronic logic gates.