材料科学
噪声系数
光学
波长
光电子学
放大器
兴奋剂
二极管
光放大器
光纤
激光器
物理
CMOS芯片
作者
Naresh Kumar Thipparapu,Andrey Umnikov,Pranabesh Barua,J.K. Sahu
出处
期刊:Optics Letters
[The Optical Society]
日期:2016-03-25
卷期号:41 (7): 1518-1518
被引量:70
摘要
Bismuth (Bi)-doped phosphosilicate fibers have been fabricated by the modified chemical vapor deposition (MCVD)-solution doping technique under different process conditions. The influence of fabrication conditions on unsaturable loss in fibers has been investigated. Pump wavelength dependent Bi gain has been studied to obtain a flat gain over a wide bandwidth. A diode pumped all-fiber Bi-doped amplifier with a flat gain of 25±1 dB from 1320-1360 nm (40 nm) has been demonstrated for -10 dBm of input signal power with a noise figure (NF) ranging from 4-6 dB. Moreover, a small signal gain of 29 dB and a NF of 4.5 dB at 1340 nm has been achieved for an input signal power of -30 dBm.
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