SiGe/Si Superlattice Ferroelectric HfZrO2 ΩFET and CMOS Inverter With SSmin,n = 62.4 mV/dec, ION/IOFF > 1.0 × 107, and Voltage Gain = 111.4 V/V

This study introduces a SiGe/Si superlattice (SL) ferroelectric omega field-effect transistor (Fe-ΩFET). The ferroelectric characteristics of the developed TiN/Fe-hafnium–zirconium oxide (HZO)/SL metal–insulator–semiconductor (MIS) capacitor were confirmed through grazing incidence x-ray diffraction (GIXRD) analysis at different temperatures. Fe-HZO usage improved the device performance, achieving subthreshold slopes (SS) of SS _min,n = 62.4 mV/dec and SS _min,p = 71.1 mV/dec, drain-induced barrier lowering (DIBL) values of DIBL _n = 26.4 mV/V and DIBL _p = 37.6 mV/V, and a high ON-OFF current ratio exceeding 1.0 × 10 ⁷ . Compared to the device with HfO ₂ as a gate insulator with channel width (W _CH ) = 30 nm and gate length (L _G ) = 60 nm, the performance of the developed device was greatly improved. The voltage transfer characteristic (VTC) and voltage gain of SiGe/Si SL Fe-ΩFET complementary metal-oxide-semiconductor (CMOS) inverter were also demonstrated, with a maximum gain of 111.4 V/V. In addition, the simulation of a state-of-the-art SiGe/Si SL Fe-ΩFET was investigated. These results indicate that SiGe/Si SL Fe-ΩFETs exhibit remarkable subthreshold properties and mitigate the short-channel effect.