Versatility of the SiH–CdCl2 Heterostructure: Piezoelectricity, Photocatalysis, and Transistor Applications

异质结 光电子学 材料科学 半导体 量子隧道 热离子发射 带隙 单层 晶体管 纳米技术 压电 电子 物理 电压 量子力学 复合材料
作者
Achintya Priydarshi,Abhinav Arora,Yogesh Singh Chauhan,Amit Agarwal,Somnath Bhowmick
出处
期刊:Journal of Physical Chemistry C [American Chemical Society]
卷期号:127 (43): 21279-21288 被引量:10
标识
DOI:10.1021/acs.jpcc.3c04021
摘要

Unlike bilayers or a few layer-thick materials, heterostructures are designer materials formed by assembling different monolayers in any desired sequence. As a result, heterostructures can be tailor-made for specific functionalities and applications. Here, we demonstrate the potential of the SiH–CdCl2 heterostructure for three types of applications. Piezoelectricity originates from interlayer charge transfer, and the heterostructure has an out-of-plane piezoelectric coefficient of −7.75 pC/m, comparable to and even higher than some recently reported 2D materials. The heterostructure is a potential candidate for photocatalytic water splitting by using solar energy. Not only does the band gap lie within the solar absorption spectrum, but a type-II band alignment also ensures electron and hole accumulation in separate monolayers, reducing their recombination. Tunnel field effect transistors (TFETs) made of heterostructures have a subthreshold swing (SS) comparable to that of reported transition metal dichalcogenide-based TFETs. SS below 60 mV/dec results as the device is modulated by band-to-band quantum tunneling, instead of thermionic emission dominated process in traditional metal-oxide-semiconductor field effect transistor. Overall, our work illustrates the multifunctional nature of heterostructures, which can be designed by leveraging the extensive database of layered materials to suit the specific needs of next-generation devices.
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