电子
掺杂剂
兴奋剂
材料科学
氮气
电场
波函数
散射
原子物理学
电子散射
凝聚态物理
化学
光电子学
光学
物理
有机化学
量子力学
作者
Keita Tachiki,Yusuke Nishiya,Junichi Iwata,Yu-ichiro Matsushita
标识
DOI:10.35848/1347-4065/acd9ff
摘要
Abstract In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO 2 interface when nitrogen is introduced as a dopant within a few nm of the SiC surface. When a highly doped nitrogen layer (5 × 10 19 cm −3 ) is introduced within a few nm of the SiC(112̅0) surface, the electronic state is not significantly affected if the doping region is less than 4 nm. However, if the doping region exceeds 4 nm, the effect of quantum confinement decreases, which increases the electron density induced in the inversion layer. As for the wavefunction, even when an electric field is applied, the peak shifts toward the direction in which the electrons are pulled away from the interface. This reduces the effect of electron scattering at the interface and improves electron mobility.
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