材料科学
半导体
弹性体
图层(电子)
光电子学
胶粘剂
晶体管
分层(地质)
电导率
纳米技术
可伸缩电子设备
蒸发
复合材料
数码产品
电压
电气工程
物理
工程类
物理化学
古生物学
热力学
生物
化学
构造学
俯冲
作者
Min Hyouk Kim,Min Woo Jeong,Jun Su Kim,Tae Uk Nam,Ngoc Thanh Phuong Vo,Lihua Jin,Tae Il Lee,Jin Young Oh
出处
期刊:Science Advances
[American Association for the Advancement of Science (AAAS)]
日期:2022-12-23
卷期号:8 (51)
被引量:7
标识
DOI:10.1126/sciadv.ade2988
摘要
Despite recent remarkable advances in stretchable organic thin-film field-effect transistors (OTFTs), the development of stretchable metallization remains a challenge. Here, we report a highly stretchable and robust metallization on an elastomeric semiconductor film based on metal-elastic semiconductor intermixing. We found that vaporized silver (Ag) atom with higher diffusivity than other noble metals (Au and Cu) forms a continuous intermixing layer during thermal evaporation, enabling highly stretchable metallization. The Ag metallization maintains a high conductivity (>104 S/cm) even under 100% strain and successfully preserves its conductivity without delamination even after 10,000 stretching cycles at 100% strain and several adhesive tape tests. Moreover, a native silver oxide layer formed on the intermixed Ag clusters facilitates efficient hole injection into the elastomeric semiconductor, which transcends previously reported stretchable source and drain electrodes for OTFTs.
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