电致发光
发光二极管
光电子学
材料科学
激子
纳米点
自发辐射
二极管
带隙
荧光粉
图层(电子)
光学
物理
纳米技术
凝聚态物理
激光器
作者
Guangsong Zheng,Ting Wang,Qing Lou,Cheng‐Long Shen,Mengyuan Wu,Junlu Sun,Wenyu Ji,Jinhao Zang,Kai-Kai Liu,Lin Dong,Chongxin Shan
标识
DOI:10.1021/acs.jpclett.1c04028
摘要
Localized excitons are expected to achieve high-performance electroluminescence and have been widely investigated in GaN-based light-emitting diodes (LEDs). Although carbon nanodot (CD) based LEDs have been achieved with the radiative recombination of electrons and holes, localized excitonic electroluminescence has been not reported before. In this Letter, localized excitonic electroluminescent devices have been fabricated using fluorescent CDs as an active layer. The CDs show strong localized excitonic yellow emission with a fluorescence quantum yield of 76% and Stokes shift of 2.1 eV. The CD-based LEDs present a sub-bandgap turn-on voltage of 2.4 V and a maximum luminance of 60.2 cd m-2, which is the lowest driving voltage among the CD-based electroluminescent devices. Localized centers trap carriers effectively, resulting in sub-bandgap light emission. The current results manifest that localized excitons may furnish a promising approach to boost the development of CD-based LEDs.
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