300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling

Two-dimensional (2D) materials have garnered significant attention in the past decade as a crucial enabler for "More Moore" scaling. Here we demonstrate and characterize metallo-organic chemical vapor deposition (MOCVD) of 2D materials directly on a 300 mm Si platform, including p-type WSe 2 for the first time. We establish process conditions for MX 2 (M = Mo, W; X = S, Se) targeted for both BEOL- and FEOL-application spaces. FETs fabricated on 300 mm n-type MoS 2 film show appreciable variability (σ/μ ~ 0.2) that in-creases with scaled geometry. Our as-deposited MOCVD WSe 2 pMOS devices achieve a record I ON ~100 μA/μm. We also exhibit advancement in patterned convertible templating (PCT) that is ultimately compatible with 300 mm technologies.