中间层
材料科学
硅
热的
通过硅通孔
导线
热导率
电子工程
绝缘体上的硅
载流量
光电子学
导电体
基质(水族馆)
三维集成电路
串扰
机械工程
集成电路
复合材料
工程类
物理
图层(电子)
气象学
地质学
海洋学
蚀刻(微加工)
作者
Jiacheng Xie,Bo Xie,Madhavan Swaminathan
摘要
SUMMARY In this paper, electrical–thermal modeling of through‐silicon via (TSV) arrays is presented. In order to address the thermal effect on TSVs, TSV array design and modeling need to take into account the effect of realistic system thermal profile to meet design budget. To obtain temperature estimation for a 3D system, cascadic multigrid method is employed using an initial guess obtained by simulation using equivalent thermal conductivity to represent critical regions. By considering the thermal effect on electrical conductivities of TSV conductor and silicon substrate, the electrical–thermal modeling of TSV array in the interposer is carried out using cylindrical modal basis functions. The temperature effect on TSV insertion loss, crosstalk, and RLCG parameters are discussed with examples along with correlation with measurements. Copyright © 2012 John Wiley & Sons, Ltd.
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