材料科学
光电子学
电介质
晶体管
栅极电介质
制作
退火(玻璃)
高-κ电介质
阈值电压
形成气体
泄漏(经济)
原子层沉积
纳米技术
图层(电子)
电压
电气工程
复合材料
医学
替代医学
病理
经济
宏观经济学
工程类
作者
Peng Zhao,Angelica Azcatl,Pavel Bolshakov,Jiyoung Moon,Christopher L. Hinkle,Paul K. Hurley,Robert M. Wallace,Chadwin D. Young
摘要
Transition metal dichalcogenides (TMDs) have attracted intensive attention due to their atomic layer-by-layer structure and moderate energy bandgap. However, top-gated transistors were only reported in a limited number of research works, especially transistors with a high-k gate dielectric that are thinner than 10 nm because high-k dielectrics are difficult to deposit on the inert surface of the sulfide-based TMDs. In this work, the authors fabricated and characterized top-gated, few-layer MoS2 transistors with an 8 nm HfO2 gate dielectric. The authors show that the cleaning effect of ultrahigh vacuum annealing before high-k deposition results in significantly reduced gate leakage current of HfO2, and they show that N2 or a forming gas anneal after device fabrication affects the threshold voltage, drive current, dielectric leakage, and C-V frequency dependence. This work demonstrates how the fabrication process can affect the yield and the electrical characterization of top-gated TMD transistors, which in effect can help researchers further enhance the performance of their devices.
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