材料科学
光致发光
纳米线
熔盐
盐(化学)
纳米技术
化学工程
冶金
光电子学
物理化学
化学
工程类
作者
Ju Zhang,Wei Li,Quanli Jia,Liangxu Lin,Juntong Huang,Shaowei Zhang
标识
DOI:10.1016/j.ceramint.2015.06.089
摘要
Abstract Single crystalline silicon carbide nanowires (SiC NWs) were prepared through the carbothermal reduction route using silica fume and phenolic resin in a molten salt (NaCl and NaF) medium at 1450 °C. The presence of molten salts was found to have a noticeable effect on the complete conversion of SiO 2 to 3C–SiC with the temperature increasing from 1300 °C to 1450 °C, and NaF/NaCl ratios and molten salts/reactant ratios also played vital roles in the growth of SiC NWs. The as-achieved SiC NWs were 100–150 nm in diameter and 10 μm in length, which grew along the direction perpendicular to the (111) plane and contained stacking faults (SFs). The as-synthesized SiC NWs had a strong emission peak (422 nm) located in the violet–blue spectral range, suggesting potential applications in optoelectronic devices. All these discoveries suggest a cheap and feasible route for large scale growth of high quality SiC NWs at low temperature.
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