MOSFET
兴奋剂
材料科学
基质(水族馆)
光电子学
功率MOSFET
离子注入
频道(广播)
电子工程
逻辑门
电气工程
计算机科学
工程类
离子
物理
晶体管
电压
地质学
海洋学
量子力学
作者
Minghao He,Fanming Zeng,Wei-Chih Cheng,Qing Wang,Hongyu Yu,Kah-Wee Ang
出处
期刊:IEEE Electron Devices Technology and Manufacturing Conference
日期:2020-04-06
被引量:1
标识
DOI:10.1109/edtm47692.2020.9117830
摘要
MOSFET power device with beta-Ga 2 O 3 substrate are simulated via TCAD and discussed in this paper. Material models are established and calibrated based on the existing experimental results. Device design specifications like channel doping profile, gate-source distance, selective doping, field plate enhancement, and ion-implantation profile are evaluated and discussed. The results serve as a guide and reference for the beta-Ga 2 O 3 , MOSFET device design.
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