Wafer-Scale Patterning of Lead Telluride Nanowires: Structure, Characterization, and Electrical Properties

纳米线 材料科学 X射线光电子能谱 扫描电子显微镜 碲化铅 纳米技术 薄脆饼 光电子学 化学工程 复合材料 兴奋剂 工程类
作者
Yongan Yang,David K. Taggart,Matthew A. Brown,Chengxiang Xiang,Sheng-Chin Kung,Fan Yang,John C. Hemminger,Reginald M. Penner
出处
期刊:ACS Nano [American Chemical Society]
卷期号:3 (12): 4144-4154 被引量:39
标识
DOI:10.1021/nn901173p
摘要

Nanowires of lead telluride (PbTe) were patterned on glass surfaces using lithographically patterned nanowire electrodeposition (LPNE). LPNE involved the fabrication by photolithography of a contoured nickel nanoband that is recessed by approximately 300 nm into a horizontal photoresist trench. Cubic PbTe was then electrodeposited from a basic aqueous solution containing Pb(2+) and TeO(3)(2-) at the nickel nanoband using a cyclic deposition/stripping potential program in which lead-rich PbTe was first deposited in a negative-going potential scan and excess lead was then anodically stripped from the nascent nanowire by scanning in the positive direction to produce near stoichiometric PbTe. Repeating this scanning procedure permitted PbTe nanowires 60-400 nm in width to be obtained. The wire height was controlled over the range of 20-100 nm based upon the nickel film thickness. Nanowires with lengths exceeding 1 cm were prepared in this study. We report the characterization of these nanowires using X-ray diffraction, transmission electron microscopy and electron diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy (XPS). The surface chemical composition of PbTe nanowires was monitored by XPS as a function of time during the exposure of these nanowires to laboratory air. One to two monolayers of a mixed Pb and Te oxide are formed during a 24 h exposure. The electrical conductivity of PbTe nanowires was strongly affected by air oxidation, declining from an initial value of 2.0(+/-1.5) x 10 (4) S/m by 61% (for nanowires with a 20 nm thickness), 55% (for 40 nm), and 12% (for 60 nm).
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