Monolithic Bidirectional Switch Based on GaN Gate Injection Transistors

The paper deals with a bi-directional switch based on N-channel enhancement-mode GaN FET. The proposed device is a Gate Injection Transistor monolithic solution to reduce the volume of the switch with high current density and blocking voltage of 600V. It features a dual-gate control pin and two power terminal. In the paper, the main characteristics of the bi-directional switch and the performance in the four-quadrant of operation are examined and discussed. The device characteristics are compared with the traditional MOSFET and IGBT solutions. The gate driver design issues are considered to optimize the switching transient of the GaN-based switch. Finally, an experimental evaluation of the GaN FET as the bidirectional circuit breaker is carried out in an AC power supply system to validate the effectiveness of the proposed monolithic new device.