薄脆饼
材料科学
表面粗糙度
晶片键合
阳极连接
复合材料
表面光洁度
薄膜
光电子学
纳米技术
作者
Masahide Yamamoto,Takashi Matsumae,Yuichi Kurashima,Hideki Takagi,Tadatomo Suga,Seiichi Takamatsu,Toshihiro Itoh,Eiji Higurashi
出处
期刊:Micromachines
[MDPI AG]
日期:2020-04-27
卷期号:11 (5): 454-454
被引量:20
摘要
Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.
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