材料科学
光电探测器
蓝宝石
应变工程
光电子学
带隙
纳米技术
光学
激光器
硅
物理
作者
Sheng Wen Wang,Henry Medina,Kuo Bin Hong,Chun Chia Wu,Yindong Qu,Arumugam Manikandan,Teng Su,Po-Tsung Lee,Zhi Huang,Zhiming Wang,Feng‐Chuan Chuang,Hao−Chung Kuo,Yu‐Lun Chueh
出处
期刊:ACS Nano
[American Chemical Society]
日期:2017-09-05
卷期号:11 (9): 8768-8776
被引量:67
标识
DOI:10.1021/acsnano.7b02444
摘要
Integration of strain engineering of two-dimensional (2D) materials in order to enhance device performance is still a challenge. Here, we successfully demonstrated the thermally strained band gap engineering of transition-metal dichalcogenide bilayers by different thermal expansion coefficients between 2D materials and patterned sapphire structures, where MoS2 bilayers were chosen as the demonstrated materials. In particular, a blue shift in the band gap of the MoS2 bilayers can be tunable, displaying an extraordinary capability to drive electrons toward the electrode under the smaller driven bias, and the results were confirmed by simulation. A model to explain the thermal strain in the MoS2 bilayers during the synthesis was proposed, which enables us to precisely predict the band gap-shifted behaviors on patterned sapphire structures with different angles. Furthermore, photodetectors with enhancement of 286% and 897% based on the strained MoS2 on cone- and pyramid-patterned sapphire substrates were demonstrated, respectively.
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